TI RFP7N35

TI · FETs & Power MOSFETs · MPN RFP7N35

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Specifications

Drain to Source Voltage350V
Output Capacitance(Coss)300pF
Current - Continuous Drain(Id)7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation75W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)750mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.6nF
TypeN-Channel

Technical details

350V 7A 4V 75W 750mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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