TI · FETs & Power MOSFETs · MPN RFP50N05
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| Gate Charge(Qg) | 160nC@20V |
|---|---|
| Drain to Source Voltage | 50V |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 132W |
| RDS(on) | 22mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
50V 50A 2V 132W 22mΩ@10V 1 N-channel N-Channel TO-220AB Single FETs, MOSFETs