TI RFP4N05

TI · FETs & Power MOSFETs · MPN RFP4N05

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Specifications

Drain to Source Voltage50V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)800mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)200pF
TypeN-Channel

Technical details

50V 4A 4V 800mΩ@10V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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