TI · FETs & Power MOSFETs · MPN RFP40N10LE
No reviews yet — be the first to review TI RFP40N10LE.
| Gate Charge(Qg) | 180nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Output Capacitance(Coss) | 500pF |
| Current - Continuous Drain(Id) | 40A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 150W |
| RDS(on) | 40mΩ@5V |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| Input Capacitance(Ciss) | 3nF |
| Type | N-Channel |
100V 40A 3V 150W 40mΩ@5V N-Channel Single FETs, MOSFETs RoHS