TI RFP2N20

TI · FETs & Power MOSFETs · MPN RFP2N20

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Specifications

Drain to Source Voltage200V
Output Capacitance(Coss)60pF
Current - Continuous Drain(Id)2A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)3.5Ω@10V
Number1 N-channel
Input Capacitance(Ciss)200pF

Technical details

200V 2A 4V 3.5Ω@10V 1 N-channel TO-220AB Single FETs, MOSFETs

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