TI RFP2N15

TI · FETs & Power MOSFETs · MPN RFP2N15

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage150V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.75Ω@10V
Number1 N-channel
Input Capacitance(Ciss)200pF

Technical details

150V 4V 1.75Ω@10V 1 N-channel TO-220-3 Single FETs, MOSFETs

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