TI RFP25N05L

TI · FETs & Power MOSFETs · MPN RFP25N05L

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)80nC@010V
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
RDS(on)56mΩ@4V
Number1 N-channel
TypeN-Channel

Technical details

50V 2V 56mΩ@4V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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