TI RFP12N06RLE

TI · FETs & Power MOSFETs · MPN RFP12N06RLE

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Specifications

Gate Charge(Qg)40nC@10V
Drain to Source Voltage60V
Current - Continuous Drain(Id)12A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation40W
RDS(on)135mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

60V 12A 2V 40W 135mΩ@5V 1 N-channel N-Channel TO-220 Single FETs, MOSFETs

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