TI RFP10N15L

TI · FETs & Power MOSFETs · MPN RFP10N15L

No reviews yet — be the first to review TI RFP10N15L.

Specifications

Drain to Source Voltage150V
Output Capacitance(Coss)250pF
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)120pF
RDS(on)300mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)1.2nF
TypeN-Channel

Technical details

150V 10A 1V 300mΩ@5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs

Related FETs & Power MOSFETs