TI · FETs & Power MOSFETs · MPN RFM6P10
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| Drain to Source Voltage | 100V |
|---|---|
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 6A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 600mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 800pF |
| Type | P-Channel |
100V 6A 4V 600mΩ@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs