TI RFM12P10

TI · FETs & Power MOSFETs · MPN RFM12P10

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Specifications

Drain to Source Voltage100V
Current - Continuous Drain(Id)12A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)300mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)1.5nF
TypeP-Channel

Technical details

100V 12A 4V 300mΩ@10V 1 P-Channel P-Channel TO-3 Single FETs, MOSFETs

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