TI · FETs & Power MOSFETs · MPN RFM12N10
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| Drain to Source Voltage | 100V |
|---|---|
| Output Capacitance(Coss) | 300pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | - |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 200mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 850pF |
| Type | N-Channel |
100V 12A 2V 200mΩ@10V 1 N-channel N-Channel TO-3 Single FETs, MOSFETs