TI RFL4N15

TI · FETs & Power MOSFETs · MPN RFL4N15

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Specifications

Drain to Source Voltage150V
Current - Continuous Drain(Id)4A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)100pF
RDS(on)400mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)850pF

Technical details

150V 4A 2V 400mΩ@10V 1 N-channel TO-205AF(TO-39) Single FETs, MOSFETs

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