TI RFL1P08

TI · FETs & Power MOSFETs · MPN RFL1P08

No reviews yet — be the first to review TI RFL1P08.

Specifications

Drain to Source Voltage80V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)1A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation8.33W
Reverse Transfer Capacitance (Crss@Vds)30pF
RDS(on)3.65Ω@10V
Number1 P-Channel
Input Capacitance(Ciss)150pF

Technical details

80V 1A 4V 8.33W 3.65Ω@10V 1 P-Channel TO-205AF(TO-39) Single FETs, MOSFETs

Related FETs & Power MOSFETs