TI RFL1N12

TI · FETs & Power MOSFETs · MPN RFL1N12

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Specifications

Drain to Source Voltage120V
Output Capacitance(Coss)80pF
Current - Continuous Drain(Id)1A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)25pF
RDS(on)1.9Ω@10V
Number1 N-channel
Input Capacitance(Ciss)200pF
TypeN-Channel

Technical details

120V 1A 4V 1.9Ω@10V 1 N-channel N-Channel TO-205AF(TO-39) Single FETs, MOSFETs

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