TI RFH30N12

TI · FETs & Power MOSFETs · MPN RFH30N12

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Specifications

Drain to Source Voltage120V
Output Capacitance(Coss)1.2nF
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)500pF
RDS(on)75mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3nF

Technical details

120V 30A 4V 150W 75mΩ@10V 1 N-channel TO-218 Single FETs, MOSFETs

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