TI RFG50N06LE

TI · FETs & Power MOSFETs · MPN RFG50N06LE

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Specifications

Configuration-
Drain to Source Voltage60V
Gate Charge(Qg)120nC@10V
Output Capacitance(Coss)600pF
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation142W
Reverse Transfer Capacitance (Crss@Vds)230pF
RDS(on)22mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)2.1nF

Technical details

60V 50A 2V 142W 22mΩ@5V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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