TI RFG50N05

TI · FETs & Power MOSFETs · MPN RFG50N05

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Specifications

Gate Charge(Qg)80nC@10V
Drain to Source Voltage50V
Current - Continuous Drain(Id)50A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation-
RDS(on)22mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

50V 50A 2V 22mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

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