TI RFG45N06

TI · FETs & Power MOSFETs · MPN RFG45N06

No reviews yet — be the first to review TI RFG45N06.

Specifications

Drain to Source Voltage60V
Gate Charge(Qg)150nC@20V
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)28mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.05nF
TypeN-Channel

Technical details

60V 45A 4V 28mΩ@10V 1 N-channel N-Channel TO-247 Single FETs, MOSFETs

Related FETs & Power MOSFETs