TI RFG30P05

TI · FETs & Power MOSFETs · MPN RFG30P05

No reviews yet — be the first to review TI RFG30P05.

Specifications

Gate Charge(Qg)200nC@20V
Drain to Source Voltage50V
Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)65mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)-
TypeP-Channel

Technical details

50V 30A 4V 65mΩ@10V 1 P-Channel P-Channel TO-247 Single FETs, MOSFETs

Related FETs & Power MOSFETs