TI · FETs & Power MOSFETs · MPN RFD8P06LE
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Output Capacitance(Coss) | 175pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 48W |
| Reverse Transfer Capacitance (Crss@Vds) | 50pF |
| RDS(on) | 300mΩ@5V |
| Input Capacitance(Ciss) | 675pF |
| Type | P-Channel |
60V 8A 2V 48W 300mΩ@5V P-Channel Single FETs, MOSFETs RoHS