TI · FETs & Power MOSFETs · MPN RFD7N10LE
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 150nC@10V |
| Output Capacitance(Coss) | 70pF |
| Current - Continuous Drain(Id) | 7A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 47W |
| Reverse Transfer Capacitance (Crss@Vds) | 20pF |
| RDS(on) | 300mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 360pF |
| Type | N-Channel |
100V 7A 2V 47W 300mΩ@5V 1 N-channel N-Channel TO-220-3 Single FETs, MOSFETs