TI · FETs & Power MOSFETs · MPN RFD4N06L
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| Gate Charge(Qg) | 5nC@5V |
|---|---|
| Drain to Source Voltage | 60V |
| Current - Continuous Drain(Id) | 4A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 30W |
| RDS(on) | 600mΩ@5V |
| Number | 1 N-channel |
| Type | N-Channel |
60V 4A 2.5V 30W 600mΩ@5V 1 N-channel N-Channel IPAK Single FETs, MOSFETs