TI · FETs & Power MOSFETs · MPN RFD3055
No reviews yet — be the first to review TI RFD3055.
| Gate Charge(Qg) | 12nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 100pF |
| Current - Continuous Drain(Id) | 12A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 53W |
| Reverse Transfer Capacitance (Crss@Vds) | 30pF |
| RDS(on) | 150mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 300pF |
| Type | N-Channel |
60V 12A 4V 53W 150mΩ@10V 1 N-channel N-Channel IPAK Single FETs, MOSFETs