TI · FETs & Power MOSFETs · MPN RFD20N03SM
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| Configuration | - |
|---|---|
| Drain to Source Voltage | 30V |
| Gate Charge(Qg) | 40nC@10V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 90W |
| Reverse Transfer Capacitance (Crss@Vds) | 110pF |
| RDS(on) | 25mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.15nF |
30V 20A 4V 90W 25mΩ@10V 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs