TI RFD16N05L

TI · FETs & Power MOSFETs · MPN RFD16N05L

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)-
Current - Continuous Drain(Id)-
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)-
Number1 N-channel

Technical details

50V 1 N-channel TO-251AA Single FETs, MOSFETs

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