TI RFD16N03LSM9A

TI · FETs & Power MOSFETs · MPN RFD16N03LSM9A

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Specifications

Configuration-
Gate Charge(Qg)-
Drain to Source Voltage30V
Current - Continuous Drain(Id)16A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)25mΩ
Number-
Input Capacitance(Ciss)-
TypeN-Channel

Technical details

30V 16A 25mΩ N-Channel Single FETs, MOSFETs RoHS

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