TI RFD16N03LSM

TI · FETs & Power MOSFETs · MPN RFD16N03LSM

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Specifications

Drain to Source Voltage30V
Current - Continuous Drain(Id)16A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)-
Number1 N-channel
TypeN-Channel

Technical details

30V 16A 1 N-channel N-Channel TO-252-3(DPAK) Single FETs, MOSFETs

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