TI RFD10N05SM

TI · FETs & Power MOSFETs · MPN RFD10N05SM

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Specifications

Drain to Source Voltage50V
Current - Continuous Drain(Id)10A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)100mΩ
Number1 N-channel
TypeN-Channel

Technical details

50V 10A 100mΩ 1 N-channel N-Channel TO-252(DPAK) Single FETs, MOSFETs RoHS

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