TI · FETs & Power MOSFETs · MPN RFB18N10CS
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 79W |
| RDS(on) | 100mΩ@10V |
| Number | 1 N-channel |
| Type | N-Channel |
100V 18A 4V 79W 100mΩ@10V 1 N-channel N-Channel TO-220AB-5 Single FETs, MOSFETs