TI RFA100N05E

TI · FETs & Power MOSFETs · MPN RFA100N05E

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Specifications

Drain to Source Voltage50V
Gate Charge(Qg)230nC@10V
Current - Continuous Drain(Id)100A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation-
RDS(on)8mΩ@10V
Number1 N-channel
TypeN-Channel

Technical details

50V 100A 4V 8mΩ@10V 1 N-channel N-Channel TO-218-5 Single FETs, MOSFETs

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