TI · FETs & Power MOSFETs · MPN RF1S9640
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| Gate Charge(Qg) | 90nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 375pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | 500mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.1nF |
| Type | P-Channel |
200V 11A 4V 125W 500mΩ@10V 1 P-Channel P-Channel TO-220AB Single FETs, MOSFETs