TI RF1S9630SM

TI · FETs & Power MOSFETs · MPN RF1S9630SM

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Specifications

Drain to Source Voltage200V
Current - Continuous Drain(Id)6.5A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)800mΩ
Number1 P-Channel
TypeP-Channel

Technical details

200V 6.5A 800mΩ 1 P-Channel P-Channel TO-263AB Single FETs, MOSFETs

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