TI · FETs & Power MOSFETs · MPN RF1S70N06
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| Gate Charge(Qg) | 85nC@10V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 792pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 206pF |
| RDS(on) | 14mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.25nF |
| Type | N-Channel |
60V 70A 4V 150W 14mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs