TI RF1S70N03

TI · FETs & Power MOSFETs · MPN RF1S70N03

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)145nC@10V
Output Capacitance(Coss)1.75nF
Current - Continuous Drain(Id)70A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)750pF
RDS(on)10mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)3.3nF
TypeN-Channel

Technical details

30V 70A 4V 150W 10mΩ@10V 1 N-channel N-Channel TO-262AA Single FETs, MOSFETs

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