TI · FETs & Power MOSFETs · MPN RF1S640SM
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| Drain to Source Voltage | 200V |
|---|---|
| Gate Charge(Qg) | 64nC@10V |
| Output Capacitance(Coss) | 400pF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 125W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 180mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.275nF |
| Type | N-Channel |
200V 18A 4V 125W 180mΩ@10V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs