TI · FETs & Power MOSFETs · MPN RF1S630SM9A
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| Gate Charge(Qg) | - |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| RDS(on) | 400mΩ |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
200V 9A 400mΩ 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS