TI · FETs & Power MOSFETs · MPN RF1S540
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 59nC@10V |
| Output Capacitance(Coss) | 550pF |
| Current - Continuous Drain(Id) | 28A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 150W |
| Reverse Transfer Capacitance (Crss@Vds) | 100pF |
| RDS(on) | 77mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
| Type | N-Channel |
100V 28A 4V 150W 77mΩ@10V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs