TI · FETs & Power MOSFETs · MPN RF1S530SM9A
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 30nC@10V |
| Output Capacitance(Coss) | 250pF |
| Current - Continuous Drain(Id) | 14A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 79W |
| RDS(on) | 160mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 3.5pF |
| Input Capacitance(Ciss) | 600pF |
| Type | N-Channel |
100V 14A 4V 79W 160mΩ@10V N-Channel Single FETs, MOSFETs RoHS