TI · FETs & Power MOSFETs · MPN RF1S50N06LESM
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 120nC@10V |
| Output Capacitance(Coss) | 600pF |
| Current - Continuous Drain(Id) | 50A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 142W |
| Reverse Transfer Capacitance (Crss@Vds) | 230pF |
| RDS(on) | 22mΩ@5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.1nF |
| Type | N-Channel |
60V 50A 2V 142W 22mΩ@5V 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs