TI · FETs & Power MOSFETs · MPN RF1S4N100SM9A
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| Drain to Source Voltage | 1kV |
|---|---|
| Current - Continuous Drain(Id) | 4.3A |
| Operating Temperature - | - |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | - |
| RDS(on) | 3.5Ω |
| Number | 1 N-channel |
| Type | N-Channel |
1kV 4.3A 3.5Ω 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs RoHS