TI RF1S45N03L

TI · FETs & Power MOSFETs · MPN RF1S45N03L

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)60nC@10V
Output Capacitance(Coss)575pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)200pF
RDS(on)22mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)1.65nF
TypeN-Channel

Technical details

30V 45A 2V 90W 22mΩ@5V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs

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