TI RF1S45N02LSM

TI · FETs & Power MOSFETs · MPN RF1S45N02LSM

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Specifications

Drain to Source Voltage20V
Current - Continuous Drain(Id)45A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)-
Number1 N-channel
TypeN-Channel

Technical details

20V 45A 1 N-channel N-Channel TO-263AB Single FETs, MOSFETs

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