TI RF1S45N02L

TI · FETs & Power MOSFETs · MPN RF1S45N02L

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Specifications

Gate Charge(Qg)50nC@5V
Drain to Source Voltage20V
Output Capacitance(Coss)724pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation90W
Reverse Transfer Capacitance (Crss@Vds)250pF
RDS(on)22mΩ@5V
Number1 N-channel
Input Capacitance(Ciss)1.3nF
TypeN-Channel

Technical details

20V 45A 2V 90W 22mΩ@5V 1 N-channel N-Channel I2PAK(TO-262) Single FETs, MOSFETs

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