TI · FETs & Power MOSFETs · MPN RF1S30P06SM9A
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 85nC@10V |
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 800pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 135W |
| Reverse Transfer Capacitance (Crss@Vds) | 175pF |
| RDS(on) | 65mΩ@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.2nF |
60V 30A 4V 135W 65mΩ@10V 1 P-Channel P-Channel TO-263AB Single FETs, MOSFETs