TI RF1S30P06

TI · FETs & Power MOSFETs · MPN RF1S30P06

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Specifications

Current - Continuous Drain(Id)30A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation135W
RDS(on)65mΩ@10V
TypeP-Channel

Technical details

30A 4V 135W 65mΩ@10V P-Channel Single FETs, MOSFETs

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