TI RF1S30P05SM

TI · FETs & Power MOSFETs · MPN RF1S30P05SM

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Specifications

Drain to Source Voltage50V
Current - Continuous Drain(Id)30A
Operating Temperature --
Gate Threshold Voltage (Vgs(th))-
Pd - Power Dissipation-
RDS(on)65mΩ
Number1 P-Channel
TypeP-Channel

Technical details

50V 30A 65mΩ 1 P-Channel P-Channel TO-263AB Single FETs, MOSFETs

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