TI RF1K4909396

TI · FETs & Power MOSFETs · MPN RF1K4909396

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Specifications

Current - Continuous Drain(Id)2.5A
RDS(on)130mΩ@5V
Pd - Power Dissipation2W
Gate Threshold Voltage (Vgs(th))2V
Drain to Source Voltage12V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)62.5pF
Input Capacitance(Ciss)775pF
Gate Charge(Qg)24nC@10V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)550pF

Technical details

2.5A 130mΩ@5V 2W 2V FET, MOSFET Arrays RoHS

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