TI · FETs & Power MOSFETs · MPN IRFU9110
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| Drain to Source Voltage | 100V |
|---|---|
| Gate Charge(Qg) | 8.7nC@10V |
| Output Capacitance(Coss) | 18pF |
| Current - Continuous Drain(Id) | 3.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 25W |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF |
| RDS(on) | 1.2Ω@10V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 290pF |
| Type | P-Channel |
100V 3.1A 4V 25W 1.2Ω@10V 1 P-Channel P-Channel TO-251AA Single FETs, MOSFETs