TI IRFU420

TI · FETs & Power MOSFETs · MPN IRFU420

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Specifications

Gate Charge(Qg)19nC@10V
Drain to Source Voltage500V
Output Capacitance(Coss)9.6pF
Current - Continuous Drain(Id)2.5A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation50W
RDS(on)3Ω@10V
Number1 N-channel
Input Capacitance(Ciss)350pF
TypeN-Channel

Technical details

500V 2.5A 4V 50W 3Ω@10V 1 N-channel N-Channel TO-251AA Single FETs, MOSFETs

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